| 摘要 |
PURPOSE:To remove the corner of a stage difference section by forming a high- concentration phosphorus ion implanting layer promoting the speed of etching to an insulating film attached onto a wiring conductor with the steep stage difference and etching the injecting layer. CONSTITUTION:The wiring conductor 203 of polycrystal silicon formed onto a silicon dioxide film 202 on a P type silicon substrate 201 is coated with a silicon dioxide film 204 containing phosphorus shaped through the reaction of silane, oxygen and phosphine. When phosphorus ions are implanted in the silicon dioxide film 204, the ion implanting region 205 is formed to a surface layer and the surface is removed by an etching liquid containing fluoric acid, a sectional shape of which the corner of the stepped section is taken off is obtained, and disconnection is not generated even when wiring crossing the stepped section is shaped onto the stepped section. |
