| 摘要 |
A dynamically controlled threshold value switch comprises: a switching element (S) of amorphous semiconductor material switchable between high and low conductivity with a delay time for transition from low to high conductivity; a control pulse generator (G) and a resistance (Rm) in series connection with the switch element (S); and a pulse shaper stage (C.Rv) having a first setting in which the effective pulse width is smaller than the delay time of the switch element (S) and a second setting in which the effective pulse width is greater than the delay time of the switching element (S). The setting may be effected by switching capacitor C into or out of circuit or by changing its value. |
