SWITCHING CIRCUITS USING MOS FIELD EFFECT TRANSISTORS,申请号GB19790043849-传众专利搜索

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发明名称	SWITCHING CIRCUITS USING MOS FIELD EFFECT TRANSISTORS
摘要
申请公布号	GB2038583(B)	申请公布日期	1983.01.12
申请号	GB19790043849	申请日期	1979.12.20
申请人	SONY CORP	发明人
分类号	H03F3/18;H03K5/02;H03K9/08;H03K17/0416;H03K17/08;H03K17/16;H03K17/567;H03K17/687;(IPC1-7):H03K17/00	主分类号	H03F3/18
代理机构		代理人
主权项
地址

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