| 摘要 |
PURPOSE:To make surface defect density at the valve two figures or less as compared with a conventional mechanical distortion method by a method wherein low-quality Si single crystal is adhered to the rear of a substrate and the thermal oxidation is applied to the substrate at high temperatures and displacement and a laminated defect are mainly formed on the rear of the substrate with high density. CONSTITUTION:In Si vapor growth, low quality Si single crystal having considerable defect density is grown on the rear of a substrate with 0.5-2.5mum and at 970 deg.C or above and the substrate is oxidized to perform Si vapor growth. This adheres low- quality Si single crystal on the rear of the substrate and applies thermal oxidation to the substrate at high temperature to mainly form displacement and a laminated defect on the rear of the substrate with high density and an Si epitaxial substrate having no surface defect can be obtained as gettering sink. At that time, displacement is mainly induced into the rear of the substrate with high density by substrate oxidation and a defect recognized on the epitaxial surface is used as a microdepotis without an oxidized induction defect and the defect density on the epitaxial surface is formed to be 0-100/cm<2> by using the high density defect included in a single crystal film as gettering sink. |
