Semiconductor device

摘要

A junction leakage current compensating circuit for a semiconductor memory device of a charge-storage type in which information can be erased by strong ultraviolet light is disclosed. The device comprises at least one dummy bit line connected to dummy cells incorporated with main memory cells and at least one compensating circuit for detecting the potential of the dummy bit line. The compensating circuit supplies compensating currents to bit lines connected to the main memory cells, responsive to the change of the potential of the dummy bit line.