| 摘要 |
PURPOSE:To contrive high integration density and high operation rate of LSI by realizing with the lift-off method the flat structure without burrs or V-shaped groove through utilization of high melting point metal such as Mo, W, Ti as the material for lift-off and through the high temperature treatment process. CONSTITUTION:The Mo film 11 is etched with the resist pattern 12 used as the mask and then the poly-Si film 3 is etched with the resist film 12 and Mo film 11 used as the mask. The SiO2 film is deposited thereon by the deposition method such as sputtering method, ECR type plasma deposition method etc. The SiO2 film is deposited like 13 on the upper surface of the Mo film 11 and simultaneously deposited like 14 at the side wall of the Mo film 11 and poly-Si film 3. When this structure is subjected to the isotropy etching, the V-shaped groove is formed since the etching speed of SiO2 film 14 is higher than that of the SiO2 film 13. This is placed in the thermal processing under N2 ambient for 30 minutes at a temperature of 900 deg.C and thereby the film quality of SiO2 film 14 is changed to the quality similat to that of the SiO2 film 13. Thereby, the desired structure is obtained by the isotropy etching. This is then subjected to the lift-off in the mixed solution of H2SO4/2H2O2. |
