| 摘要 |
PURPOSE:To prevent the deterioration of the characteristics of an element and the destruction of the junction of an electrode and a semiconductor substrate due to the reaction of the former on the latter when laser beams are irradiated by laying metal in an insulating film between layers, the metal having such properties as are capable of reacting on the insulating film between the layers by heat treatment and forming a transition layer. CONSTITUTION:After a first active region 9 comprising an SiO2 film, a source drain 3, a polycrystalline silicon gate 4 and metal wiring 5 is formed on a silicon substrate 1, an insulating film 36 between layers is formed. Then a thin Ti film 40 being 500-1,000Angstrom thick is attached onto the insulating film 36. A second insulating film 36' is formed on the Ti film 40 and subsequently a silicon film to be used for forming an active element as a second layer and an insulating film for separating elements are selectively formed. Finally, laser beams 42 are irradiated to the insulating film for separating the elements so as to make the film a single crystal. |
