| 摘要 |
PURPOSE:To enable patterning in high accuracy even when there is unevenness on the surface of a base body on which a photo-resist is applied by forming a thin-film absorbing monochromatic light for exposure as the lower layer of a photo-resist film exposed. CONSTITUTION:A silicon dioxide layer 2 with difference in stages is shaped onto the silicon substrate 1. The lower layer 3 with approximately 1-2mum thickness consisting of a substance, which contains coloring matter, such as dyestuffs, a pigment, etc. absorbing monochromatic light used for exposure and oxygen plasma-resistant property thereof is weak, is formed onto the layer 2. The normal photo-resist layer 4 is further shaped onto the layer 3. The layer 4 is selectively exposed by monochromatic light by using a photo-mask 5. In this case, incident light does not reach the surface of the layer 2 because it is absorbed into the lower layer 3, and a problem due to reflected light is not aroused. An accurate etching mask is formed by removing the layer 3 and the layer 4 exposed through a reactive ion etching method using oxygen plasma. |
