| 摘要 |
PURPOSE:To enlarge a curvature of active layer in the vicinity of end surface by allowing multi-layer growth through provision of step area after the growth of GaAlAs layer an GaAs layer in this sequence on the GaAs substrate crystal. CONSTITUTION:The p type or n type Ga0.7Al0.3As layer, p type or n type GaAs layer 3 are grown sequentially on the n type GaAs substrate 1, and then the step area is provided in the direction perpendicular to the optical waveguide direction for multi-layer growth. Here, the step are must be deep so as to reach the substrate 1. In this method,a little amount of n type GaAlAs 2 dissolves when the n type GaAlAs 4 is grown. Therefore, saturation degree of As in the solution for the growth at the vicinity of step area drops suddenly and accordingly the sharg step area which scarcely allows dissolution can be maintained. Therefore, the curvature of Ga0.85Al0.15As active layer 5 becomes sufficiently large and a high output semiconductor laser of which end surface is perfectly transparent can be obtained. |
