| 摘要 |
PURPOSE:To manufacture a superior semiconductor at an increased vapor deposition speed while stably controlling the Si-Ge composition by vapor-depositing Si and Ge from separate evaporating sources in the presence of active H and H ion obtd. by the electric discharge of gaseous H2 in a vacuum vessel. CONSTITUTION:A bell jar 1 is evacuated, a substrate 4 having a barrier forming layer 31 of silicon oxide laid on the metallic substrate 30 of stainless steel or the like is heated with a heater 5 placed at the upper part of the jar 1, and a DC negative voltage is applied to the substrate 30. An Si evaporating source 8 and a GE evaporating source 10 arranged at the lower part of the jar 1 are heated, and active H and H ion are fed from a bottom discharge tube 7 for gaseous H2 to form a semiconductor layer 32 made of amorphous Si-Ge on the layer 31. Thus, the semiconductor layer for an electrophotographic receptor, a solar battery, etc. with high efficiency of absorbing light of longer wavelengths is formed at a high vapor deposition speed while stably controlling the Si-Ge composition. |
