SEMICONDUCTOR DEVICE RESPONDING TO ION

摘要

A device comprising a field effect transistor having a floating gate 20 formed on a first surface of a substrate 10 over gate oxide 13a and source and drain regions 11, 12. A responsive layer 15 is provided on the second surface of the substrate and is capacitatively coupled to the floating gate via a thin insulating membrane 13b at a location away from the transistor. The device is applicable in the biomedical domain.