发明名称 |
Optical cladding layer design |
摘要 |
Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer. |
申请公布号 |
US9509122(B1) |
申请公布日期 |
2016.11.29 |
申请号 |
US201213597701 |
申请日期 |
2012.08.29 |
申请人 |
Aurrion, Inc. |
发明人 |
Norberg Erik;Ramaswamy Anand;Koch Brian |
分类号 |
H01L31/0328;H01S5/32 |
主分类号 |
H01L31/0328 |
代理机构 |
Schwegman Lundberg & Woessner, P.A. |
代理人 |
Schwegman Lundberg & Woessner, P.A. |
主权项 |
1. An apparatus, comprising:
a silicon semiconductor layer defining a longitudinal direction perpendicular to a top surface of the silicon semiconductor layer and a lateral direction parallel to the silicon semiconductor layer, the silicon semiconductor layer having a first thickness in a first lateral region and a second thickness in a second lateral region, the second thickness being less than the first thickness; a cladding layer positioned on the silicon semiconductor layer, the cladding layer having a third thickness in a third lateral region, the third lateral region positioned longitudinally adjacent to the first lateral region, the cladding layer having a fourth thickness in a fourth lateral region, the fourth lateral region positioned longitudinally adjacent to the second lateral region, the fourth thickness being greater than the third thickness; and a III-V semiconductor layer positioned on the cladding layer, the III-V semiconductor layer having a refractive index greater than a refractive index of the cladding layer, the III-V semiconductor layer having a fifth thickness in a fifth lateral region, at least a portion of the fifth lateral region being longitudinally adjacent to at least a portion of the third lateral region, the III-V semiconductor layer having a sixth thickness in a sixth lateral region, the sixth thickness being greater than the fifth thickness, at least a portion of the sixth lateral region being longitudinally adjacent to at least a portion of the fourth lateral region. |
地址 |
Goleta CA US |