发明名称 Optical cladding layer design
摘要 Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.
申请公布号 US9509122(B1) 申请公布日期 2016.11.29
申请号 US201213597701 申请日期 2012.08.29
申请人 Aurrion, Inc. 发明人 Norberg Erik;Ramaswamy Anand;Koch Brian
分类号 H01L31/0328;H01S5/32 主分类号 H01L31/0328
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. An apparatus, comprising: a silicon semiconductor layer defining a longitudinal direction perpendicular to a top surface of the silicon semiconductor layer and a lateral direction parallel to the silicon semiconductor layer, the silicon semiconductor layer having a first thickness in a first lateral region and a second thickness in a second lateral region, the second thickness being less than the first thickness; a cladding layer positioned on the silicon semiconductor layer, the cladding layer having a third thickness in a third lateral region, the third lateral region positioned longitudinally adjacent to the first lateral region, the cladding layer having a fourth thickness in a fourth lateral region, the fourth lateral region positioned longitudinally adjacent to the second lateral region, the fourth thickness being greater than the third thickness; and a III-V semiconductor layer positioned on the cladding layer, the III-V semiconductor layer having a refractive index greater than a refractive index of the cladding layer, the III-V semiconductor layer having a fifth thickness in a fifth lateral region, at least a portion of the fifth lateral region being longitudinally adjacent to at least a portion of the third lateral region, the III-V semiconductor layer having a sixth thickness in a sixth lateral region, the sixth thickness being greater than the fifth thickness, at least a portion of the sixth lateral region being longitudinally adjacent to at least a portion of the fourth lateral region.
地址 Goleta CA US