发明名称 SPUTTERING DEVICE
摘要 PURPOSE:To obtain thin films of multielement alloys of arbitrary compsns. by an extremely simple method by controlling the relative position relations between a piece of electrode target consisiting of plural pieces of blank materials and a substrate and sputtering speed synchronously. CONSTITUTION:After a vacuum tank 1 is evacuated with a pump 2, a sputtering gas is introduced therein from a cylinder 3 through a flow rate controlling valve 4 and DC voltage is applied between the substrate 5 held on a mechanism 6 and the target 7 on an electrode mechanism 8 by an electric power source 10, whereby the substrate is sputtered. A shutter 13 and a shielding plate 9 are disposed between the target 7 and the substrate 5. Here, a disc consisting of semicircular blank materials A, B is used for the target 7, and is rotated by a moving mechanism 11. In synchronization with the rotation thereof, discharge electric power is changed by a synchronizing mechanism 12. Then the materials A, B are exposed periodically to the opening part of the plate 9, whereby sputtering is accomplished.
申请公布号 JPS5873771(A) 申请公布日期 1983.05.04
申请号 JP19810170151 申请日期 1981.10.26
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 IWATA TSUNEKAZU;IGARASHI MASARU;ASAHI MASAYOSHI;ASANO HIDEFUMI;NAKAMURA TAKAYUKI
分类号 C23C14/34 主分类号 C23C14/34
代理机构 代理人
主权项
地址