发明名称 GATE CIRCUIT
摘要 PURPOSE:To attain a quick response characteristic without operation delay due to charge storage effect, by providing a saturation block circuit for transistors (TRs) forming a gate circuit. CONSTITUTION:Emitters of TRs21, 22 are connected in common to a constant current power supply circuit 23. A base of the TR21 is biased to a V3 with a power supply 24 and the collector is connected to a common connecting point among a cathode of a diode 25, a resistor 26 and a base of a TR27. An anode of the diode 25 is biased to a V4 with a power supply 28. The collector of the TR27 is connected to a power supply voltage VCC and the emitter is connected to the collector of the TR22 and a capacitor 29. In inputting a negative gate pulse VG to the base of the TR22, the TR27 acts like an emitter follower and an input signal V1 is given to an output terminal as an output signal V0. Althrough the TR21 turns on when no gate pulse is given, the collector potential is kept higher with the diode 25, allowing to prevent the saturation of the TR. Thus, the quick response can be attained.
申请公布号 JPS5888929(A) 申请公布日期 1983.05.27
申请号 JP19810187555 申请日期 1981.11.20
申请人 MATSUSHITA DENKI SANGYO KK 发明人 ISHIDA SUSUMU;YANO SHIGERU
分类号 H03K17/60;H03K17/04 主分类号 H03K17/60
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