| 摘要 |
PURPOSE:To obtain a wafer having a multiplicity of mesa glass-coated semiconductor devices having less warpage and hardly cracked, by providing an empty region on the peripheral part on the reverse side of a wafer where no element is formed, and coating the empty region with a glass. CONSTITUTION:After a predetermined p-n junction is formed on a wafer 10 of silicon, for example, grooves 11 where the p-n junction is exposed are formed in one main surface and coated with a glass 21. Moreover, electrodes are formed, and the wafer is divided into pellets. In this case, an empty part 30 is provided on the peripheral part on the reverse side of the wafer where no element is formed, and is coated with a glass 22. The emply part 30 is removed when the wafer is pelletized. It is to be noted that the glass 22 covering the empty part 30 is preferably a glass having a thermasl expansion coefficient equal to or larger than that of the glass 21 formed in the grooves 11 on the main surface. |
