| 摘要 |
PURPOSE:To reduce more the element occupation area by a method wherein, along the side surface of one side conductive region formed in a semi-insulating semiconductor substrate, the other side conductive region is formed at a higher density and in a shallower depth than one side conductive region so that a part is superposed in the region, and the remnant is distributed out of the region. CONSTITUTION:In the semi-insulating GaAs substrate O, using a selective ion implantation method, a p<+> type region 21 and an n type region 23 are provided in an island form so that the partial region 22 along each side surface is used in common. The respective carrier densities are; e.g. NA 1X10<18>/cm<3> and ND 1X10<19>/cm<3>, the respective depths are formed so as to be DH<DL between DH on the high density region 21 side and DL on the low density region 23 side, and the superposition length L of the common part is formed so as to satisfy L>DH. Thereby, the junction plane is formed not only on the side surface 241 of the low density region side of the common region 22, but also on a bottom surface 242, and accordingly the junction area S, when W is a junction width, becomes S=[L+DH]XW. The junction width WX to obtain the junction area of the same as this value becomed WX=0.1W, and therefore the area necessary to form a diode can be reduced to approx. 1/10 compared with the conventional one. |
