| 摘要 |
PURPOSE:To suppress local furnace temperature rise by partitioning a thermal processing furnace into a patterning chamber and an oxidation processing chamber with a shielding plate, coupling both chambers by a through hole provided to the shielding plate and by providing a cooling apparatus for lowering a patterning chamber temperature. CONSTITUTION:A cap 4 is provided to an opening area of quartz furnace tube 3 forming the processing furnace and a gas exhausting hole 4a is provided at the center thereof. A semiconductor wafer 6 is mounted on a boat 5. The interior of furnace pipe 3 is partitioned by a shielding plate 17 into an oxidation processing chamber A and patterning chamber B. Both chambers are coupled by a through hole 18. A quartz pipe 19 forms a cooling device, and both ends are located at the outside of furnace pipe 3, while the intermediate part is wound around the longitudinal direction of furnace pipe 3 along the internal wall surface of the chamber B. Thus, an inlet port 20, and exit port 22 of the cooling gas 21 are provided. |
