| 摘要 |
PURPOSE:To obtain a highly integrated semiconductor storage device which operates stably at a high speed by arraying a clamping diode at each boundary part between a column line driving circuit and a memory cell which uses a normally off type and a normally on type Schottky FET. CONSTITUTION:When the level at a terminal 708 of the column line driving circuit 705 rises, the normally on type Schottky FET709 is turned on and the FET710 is turned off through an inverter to select a corresponding column line 701 of a memory cell array 700. Then, a static memory cell using a normally off type Schottky FET which uses the column line 701 in common is selected. In this case, the clamping diode is arrayed at the boundary part between the driving circuit and memory cell and the potential at the column line 701 having started rising in level is clamped to a prescribed low level in a short time, so that a constant current flows to the ground through the FET709 and diode 706, but does not flow to the column line 701. Consequently, the rising is speeded up and potentials at respective parts of the column line 701 are made constant to obtain the semiconductor storage device which is integrated to a high degree and operates stably at a high speed. |
