| 摘要 |
PURPOSE:To remarkably improve a number of sheets of processing substrates and accordingly enhance cost performance by forming a film having uniform thickness and composition through constitution where a porous tube providing many small holes is inserted into a reaction tube and a reaction gas is supplied at a constant rate from the outside thereof. CONSTITUTION:Since a porous tube is provided within a reaction tube during formation of a film, a reaction gas of certain composition is supplied at a constant rate to each electrode in the reaction tube, an internal pressure is controlled and held at a pressure ranging from 0.1 to several Torr through adjustment of supply gas flow rate and a conductance valve 13. Thereafter, plasma is generated between electrodes by applying a high frequency electric field across electrodes holding substrate from an oscillator 4 and thereby an SiN film is formed on the substrate. At this time when a composition ratio of Si/N, namely a mol ratio of SiH4/NH3, pressure and output of oscillator are determined in order to obtain the optimum SiN film, since the reaction gas is supplied at the constant mol ratio of SiH4/NH3, a constant formation rate and a constant composition ratio can be obtained. |
