| 摘要 |
PURPOSE:To make it possible to obtain a minute pattern with high accuracy and excellent reproducibility, by a method wherein a substrate surface is coated with a multilayer structure constituted by an electron beam resist layer, an easily-fusible intermediate layer and an electron beam resist layer and is then irradiated with an electron beam having a selected dose amount. CONSTITUTION:A substrate 1 is coated with a lower electron beam resist layer 2, on which as an easily-fusible intermediate layer 5, e.g., Al is deposited by evaporation. Moreover, an upper electron beam resist layer 2' is applied thereto. Then, an electron beam 3 is applied according to a lithography pattern. The layer 2' is subjected to a sensitized development by the use of a developing solution having a strong dissolving power to form a pattern. After the layer 5 is removed by etching, the layer 2 is developed to obtain a predetermined pattern dimension. As a metal film 4, Al is deposited by evaporation so as to be substantially equal in height to the boundary surface between the layers 2' and 5. Then, the film 4 and the layers 2, 2' and 5 in unnecessary parts are removed by means of the lift-off method to form an electrode 4' on the substrate 1. By employing this method, a minute pattern in the manufacture of a semiconductor device can be obtained with high accuracy and excellent reproducibility without any deterioration in electrical performance. |
