| 摘要 |
PURPOSE:To obtain the sensor having high resolution, when the image sensor is formed by providing a conductive upper electrode and a lower electrode on both sides of an amorphous silicon photodiode on a substrate, by forming the lower electrode which is to become a common electrode on the substrate in advance, laminating an amorphous silicon layer and the upper electrode, performing etching, and transforming the upper electrode and the silicon layer into a minute pattern. CONSTITUTION:A common transparent electrode 42 comprising ITO, SnO2 and the like is formed on the insulating substrate 41 such as glass. The amorphous silicon photodiode layer 43 and an individual electrode 44 made of aluminum are laminated and deposited thereon. After the patterning by photoprocessing, etching is performed, and the individual electrode 44 which is the upper electrode and the layer 43 are transformed into the minute pattern. In this method, the interval between the elements can be made minute to the interval of about 10mum. The leaking current in the lateral direction is decreased, and the S/N ratio becomes high. |
