发明名称 GROWING METHOD FOR SINGLE CRYSTAL FROM BARIUM LEAD BISMUTHATE
摘要 PURPOSE:To obtain a single crystal suitable to a material for cryogenic elements without generating toxic gases at low temperatures, by growing a single crystal of barium lead bismuthate in a molten salt in a potassium halide as a solvent. CONSTITUTION:Powdery barium carbonate, lead dioxide and bismuth trioxide are weighed in given amounts respectively, and wet mixed, and the resultant mixture is then dehydrated, dried and calcined under heating to give a single sintered material. A given amount of the sintered material is weighed, and one or more fluxes of potassium fluoride, potassium chloride, potassium bromide and potassium iodide are weighed. The resultant mixture is then cold pressed, kept under heating at about 900-1,150 deg.C in a platinum crucible, and annealed to grow crystals. Thus, the aimed single crystals of barium lead bismuthate exhibiting the superconductivity transition are stuck to the base of the crucible, etc.
申请公布号 JPS58135199(A) 申请公布日期 1983.08.11
申请号 JP19820017082 申请日期 1982.02.05
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 KATSUI AKINORI;SUZUKI MINORU;KAMIMURA ZEIO;MURAKAMI TOSHIAKI;INAMURA TAKAHIRO
分类号 C01G29/00;C30B9/00;C30B9/12;C30B29/22;H01L39/12 主分类号 C01G29/00
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