| 摘要 |
PURPOSE:To obtain a photoconductive material always stable in electrical, optical, and photoconductive characteristics, and superior in durability and moisture resistance, by providing the second amorphous layer contg. silicon, and a specified amt. of carbon and hydrogen on the first photoconductive amorphous layer. CONSTITUTION:The second amorphous layer (II) 105 provided on the first photoconductive amorphous layer (I) 104 made of a-Si (H, X) formed on a substrate consists of silicon, carbon, and hydrogen, represented by a-(SixC1-x)yH1-y where 0.6<x<1, 0.6<=y<=0.99. This layer (II) 105 is formed by methods, such as glow discharge, sputtering, ion implantation, ion plating, and electron beams, and it contains <=30 atomic %, most preferably, 10-30 atomic % carbon. |
