SUBSTRATE PROCESSING APPARATUS

摘要

A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.

主权项

1. A substrate processing apparatus comprising:
a substrate holder rotatably disposed about a predetermined rotation axis and holding a substrate substantially horizontally; a rotating mechanism that rotates said substrate holder about said rotation axis; a processing liquid discharge unit that discharges a liquid flow of a processing liquid such that said liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of said substrate being rotated about said rotation axis; and a gas discharge unit that discharges a first gas flow of an inert gas from above toward a first position upstream from said landing position in a direction of rotation of said substrate in said rotation path so as to direct said first gas flow from said first position toward a periphery of said substrate, and discharges a second gas flow of the inert gas from above toward a second position upstream from said first position in the direction of rotation of said substrate in said rotation path so as to direct said second gas flow from said second position toward the periphery of said substrate, wherein a kinetic energy of said second gas flow when said second gas flow is discharged is lower than a kinetic energy of said first gas flow when said first gas flow is discharged.