DEVICE SUBSTRATE, METHOD OF MANUFACTURING DEVICE SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

According to one embodiment, a device substrate includes a multilayer film that includes a film constituting a device element and is disposed on a substrate. A main face on which the device element is disposed includes a patterning region on which a resist is to be applied during an imprint process, and a bevel region provided as a region from a peripheral edge portion of the patterning region to an end portion of the device substrate. The bevel region includes a region where an upper surface of the bevel region becomes lower toward the end portion of the device substrate relative to an upper surface of the patterning region. The upper surface of the bevel region has an inclination angle of 10° or more and 90° or less with respect to the upper surface of the patterning region, at a boundary between the patterning region and the bevel region.

主权项

1. A device substrate comprising a multilayer film that includes a film constituting a device element and is disposed on a substrate, wherein
a main face of the device substrate on which the device element is disposed includes
a patterning region on which a resist is to be applied during an imprint process, anda bevel region provided as a region from a peripheral edge portion of the patterning region to an end portion of the device substrate, the bevel region includes a region where an upper surface of the bevel region becomes lower toward the end portion of the device substrate relative to an upper surface of the patterning region, and the upper surface of the bevel region has an inclination angle of 10° or more and 90° or less with respect to the upper surface of the patterning region, at a boundary between the patterning region and the bevel region.