| 摘要 |
PURPOSE:To obtain the memory having high density by stacking the gate electrode of an IGFET and the electrode of a capacitance element when the IGFET and the capacitance element are formed onto a substrate and the IC memory is formed by connecting the FET and the capacitance element. CONSTITUTION:The surface of a P type Si substrate 1 is coated with an SiO2 gate insulating film 2 with approximately 300Angstrom thickness, gate electrodes 3, 4 consisting of polycrystalline Si to which phosphorus is added are formed onto the film 2, and these electrodes are coated with Si3N4 films 7, 8 each forming active regions through SiO2 films 5, 6 with approximately 100Angstrom . Thick SiO2 films 9 using P<+> type regions 10 for preventing a parasitic effect as underlays are formed while surrounding the active regions, the films 7, 8 on the active regions are partitioned, size is shrunk, a capacitance element electrode 11 consisting of polycrystalline Si to which phosphorus is added is formed onto the films 7, 8, and the surface exposed is coated with a SiO2 film 12 with approximately 5,000Angstrom thickness. Ions are implanted while using the film 12 as a mask, N type regions 13, 14 adjacent to the regions 10 are formed, and the whole is coated with Al wiring 15 including the electrodes 3, 4 exposed by partitioning the films 7, 8. |
