| 摘要 |
PURPOSE:To restore completely the damage of a semiconductor device by a method wherein the laser light of a long-wave length is irradiated from the back of a semiconductor substrate formed with the device on the surface to heat only insulating films instantaneously. CONSTITUTION:Laser light 5 is irradiated from the back of a semiconductor substrate 1 to the MOSFET consisting of the insulating films 21, 22, 25, electrodes 3, 4, and high concentration impurity regions 7 formed on the semiconductor substrate 1. The laser light 5 thereof nearly transmits silicon, but is absorbed effectively by the insulating films. Accordingly, almost all of the laser light 5 is absorbed by the thin insulating film 25 and a part of the thick insulating films 21 to heat the films. Although absorption of the light thereof is generated at the surface of the insulating film, because the insulating film 25 is thin, the film is heated nearly uniformly, and the electron capturing center 6 is restored completely. |
