| 摘要 |
PURPOSE:To outstandingly improve manufacturing efficiency through drastic curtailment of the period required for temperature rise by irradiating the infrared ray to semiconductor wafers. CONSTITUTION:A semiconductor wafer 7 is positioned just under an infrared ray lamp 9 with a transfer belt 8 and the atmosphere gas is supplied. Thereafter, the infrared ray lamp 9 is driven. The infrared ray lamp 9 should have the diameter of about 20mm., length of 150mm. and output of 1.5KW and a reflector 10 should be a parabolic surface mirror where the internal surface of metal plate is gold-plated. Here, it is no longer necessary to heat the atmosphere gas and a semiconductor wafer 7 is heated up to a temperature of about 1,000 deg.C within the period of about 10sec after irradiation of infrared ray. Impurity is diffused into the semiconductor wafer 7 and thereby the P-N junction is formed. |
