发明名称 |
Wafer frontside-backside through silicon via |
摘要 |
A wafer frontside-backside through silicon via and methods of manufacture are disclosed. The method includes forming a plurality of frontside metalized vias into a partial depth of a substrate. The method further includes forming a backside via in the substrate which exposes, from the backside, the plurality of frontside metalized vias. The method further includes forming a metal in the via in contact with the plurality of metalized frontside vias. |
申请公布号 |
US9455214(B2) |
申请公布日期 |
2016.09.27 |
申请号 |
US201414281210 |
申请日期 |
2014.05.19 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
Maling Jeffrey C.;Stamper Anthony K.;Topic-Beganovic Zeljka;Vanslette Daniel S. |
分类号 |
H01L21/44;H01L23/48;H01L21/768 |
主分类号 |
H01L21/44 |
代理机构 |
Roberts Mlotkowski Safran Cole & Calderon, P.C. |
代理人 |
Cain David;Calderon Andrew M.;Roberts Mlotkowski Safran Cole & Calderon, P.C. |
主权项 |
1. A method, comprising:
forming a plurality of frontside metalized vias into a partial depth of a substrate; mounting a frontside of the substrate to a glass handle wafer; forming a backside via in the substrate which exposes, from the backside, the plurality of frontside metalized vias; forming a metal in the backside via in contact with the plurality of metalized frontside vias; removing the glass handle wafer from the frontside of the substrate; and forming solder bumps on the frontside and backside of the substrate, wherein the solder bumps on the backside of the substrate are in direct contact with the metal. |
地址 |
Grand Cayman KY |