发明名称 Wafer frontside-backside through silicon via
摘要 A wafer frontside-backside through silicon via and methods of manufacture are disclosed. The method includes forming a plurality of frontside metalized vias into a partial depth of a substrate. The method further includes forming a backside via in the substrate which exposes, from the backside, the plurality of frontside metalized vias. The method further includes forming a metal in the via in contact with the plurality of metalized frontside vias.
申请公布号 US9455214(B2) 申请公布日期 2016.09.27
申请号 US201414281210 申请日期 2014.05.19
申请人 GLOBALFOUNDRIES INC. 发明人 Maling Jeffrey C.;Stamper Anthony K.;Topic-Beganovic Zeljka;Vanslette Daniel S.
分类号 H01L21/44;H01L23/48;H01L21/768 主分类号 H01L21/44
代理机构 Roberts Mlotkowski Safran Cole & Calderon, P.C. 代理人 Cain David;Calderon Andrew M.;Roberts Mlotkowski Safran Cole & Calderon, P.C.
主权项 1. A method, comprising: forming a plurality of frontside metalized vias into a partial depth of a substrate; mounting a frontside of the substrate to a glass handle wafer; forming a backside via in the substrate which exposes, from the backside, the plurality of frontside metalized vias; forming a metal in the backside via in contact with the plurality of metalized frontside vias; removing the glass handle wafer from the frontside of the substrate; and forming solder bumps on the frontside and backside of the substrate, wherein the solder bumps on the backside of the substrate are in direct contact with the metal.
地址 Grand Cayman KY