Mask set and method for fabricating semiconductor device by using the same

摘要

A mask set includes a first mask and a second mask. The first mask includes geometric patterns. The second mask includes at least a strip-shaped pattern with a first edge and a second edge opposite to the first edge. The strip-shaped pattern has a centerline along a long axis of the strip-shaped pattern. The first edge includes inwardly displaced segments shifting towards the centerline and each of the inwardly displaced segments overlaps each of the geometric patterns.

主权项

1. A mask set, comprising:
a first mask, comprising a plurality of geometric patterns; and a second mask, comprising at least a strip-shaped pattern with a first edge and a second edge respectively on opposite sides of the strip-shaped pattern, wherein the strip-shaped pattern has a centerline along a long axis of the strip-shaped pattern, the first and second edges respectively comprise a plurality of inwardly displaced segments shifting towards the centerline, wherein each of the inwardly displaced segments overlaps each of the geometric patterns from a planar view when the second mask is disposed over the first mask.