Semiconductor apparatus having TSV and testing method thereof

摘要

A test method of a semiconductor apparatus before a wafer is ground may include applying voltages to a bump electrically coupled to a through-silicon via (TSV) which is buried in the wafer and a first conductive layer formed to be electrically connected to a rear surface of the TSV, wherein the first conductive layer is withdrawn into an upper surface of the wafer. The method may include measuring a voltage between the bump and the first conductive layer. The method may include comparing the measured voltage to a preset reference voltage. The method may include determining the TSV as a normal TSV in which no fail occurs, according a comparing result, and grinding the wafer to expose the rear surface of the TSV.

主权项

1. A test method of a semiconductor apparatus before a wafer is ground, comprising the steps of:
applying voltages to a bump electrically coupled to a through-silicon via (TSV) which is buried in the wafer and a first conductive layer formed to be electrically connected to a rear surface of the TSV, wherein the first conductive layer is withdrawn into an upper surface of the wafer; measuring a voltage between the bump and the first conductive layer; comparing the measured voltage to a preset reference voltage; determining the TSV as a normal TSV in which no fail occurs, according a comparing result; and grinding the wafer to expose the rear surface of the TSV.