| 摘要 |
PURPOSE:To prevent malfunction due to alpha-rays by making a time constant given by a resistor of a high-resistance wiring layer forming a capacitor gate electrode and the capacitance of a capacitor larger than the duration of a funnelling effect. CONSTITUTION:The electrode P opposed to a memory node N of the capacitor is formed by the high-resistance wiring layer R, and connected to a word line WL' of an adjacent line. The time constant CR given by the layer R and capacitance C is set to a value larger than a time constant of funnelling. When the node N collects electrons formed in an extremely short time and reaches a low level, the opposite electrode P follows up to the node N by capacitive coupling and potential drops, and the electrode begins to slowly recover to a level of the line WL' at the time constant CR. The electrode P is regarded as floating in a time sufficiently shorter than the time constant CR while electrons are not collected when a time shorter then the time constant CR passes. |
