| 摘要 |
PURPOSE:To improve the reliability of an insulated gate type transistor by introducing an insulating layer for shielding a channel unit from atmospheric air, thereby avoiding the irregular characteristics caused by the edge of the film. CONSTITUTION:The first metal layer 2 to become a gate is selectively covered on an insulating substrate 1. Then, the first insulating layer 3, an amorphous silicon layer 4 containing no impurity, the second insulating layer 13 made, for example, of nitrided silicon or the like are sequentially covered on the overall surface. After the first insulating layer 3 is formed with a hole 6 for providing a connection to the layer 2, a metal layer is covered on the overall surface, source and drain wirings 7, 8 are formed on the first layer 3 containing the amorphous silicon layer containing impurity covered on an amorphous silicon layer 4' containing no impurity, and gate wirings 9 are formed on the first layer 3 containing the hole 6. Eventually, with the wirings 7, 8 as masks the amorphous silicon layer containing the impurity on the second insulating layer 13' is removed. |
