发明名称 SEMICONDUCTOR-TYPE PRESSURE SENSOR
摘要 PURPOSE:To obtain a sensor having excellent corrosion resistance characteristics, by forming a base seat, which connects a semiconductor pressure sensitive diaphragm and a pressure conducting pipe, by zircon. CONSTITUTION:For example, a semiconductor pressure sensitive diaphragm chip 1 comprising silicon is fixed to a base seat 21 comprising a sintered body of zircon (ZrO2.SiO2) by a bonding layer 13. For example, a pressure conducting pipe 3 comprising Kovar is fixed to the seat 21 by the bonding layer 13. The pressure conducting pipe 3 is fixed to a bottom plate 5 of a container by a ring shaped supporting body 4, which forms a part of the container.
申请公布号 JPS58211616(A) 申请公布日期 1983.12.09
申请号 JP19820095479 申请日期 1982.06.03
申请人 FUJI DENKI SEIZO KK 发明人 MIURA SHIYUNJI;KIBUNE FUKASHI
分类号 G01L9/04;G01L9/00 主分类号 G01L9/04
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