THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE

摘要

A thin-film transistor and a manufacturing method therefor, and a display device. The thin-film transistor comprises: a grid electrode (21), an active layer (23), a source electrode (241) and a drain electrode (242), the source electrode (241) and the drain electrode (242) being composed of at least two materials; forming materials of the source electrode (241) and the drain electrode (242) can be subjected to cell reaction in corresponding etching solutions so as to be etched, and a material of the active layer (23) cannot be corroded by an etching solution. According to the thin-film transistor and the manufacturing method therefor of embodiments of the present invention, the problem of easy corrosion of the active layer in an etching process of the source electrode and the drain electrode can be solved, so that a back channel etching technology can be adopted to prepare a thin-film transistor device, thereby reducing the technological frequency of thin-film transistor manufacturing and saving the manufacturing cost.