发明名称 |
MEMRISTIVE DEVICE WITH DOPED SOL-GEL SWITCHING LAYER |
摘要 |
In the examples provided herein, a memristive device is disclosed that has a first electrode, a second electrode, and a doped sol-gel switching layer sandwiched between the first electrode and the second electrode. The doped sol-gel switching layer is a sol-gel material doped with nanoparticles or quantum dots of a switching material. |
申请公布号 |
WO2016153461(A1) |
申请公布日期 |
2016.09.29 |
申请号 |
WO2015US21686 |
申请日期 |
2015.03.20 |
申请人 |
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP |
发明人 |
GE, Ning;YANG, Jianhua;BARCELO, Steven;LI, Zhiyong;NG, Hou T. |
分类号 |
H01L45/00;H01L27/24 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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