发明名称 MEMRISTIVE DEVICE WITH DOPED SOL-GEL SWITCHING LAYER
摘要 In the examples provided herein, a memristive device is disclosed that has a first electrode, a second electrode, and a doped sol-gel switching layer sandwiched between the first electrode and the second electrode. The doped sol-gel switching layer is a sol-gel material doped with nanoparticles or quantum dots of a switching material.
申请公布号 WO2016153461(A1) 申请公布日期 2016.09.29
申请号 WO2015US21686 申请日期 2015.03.20
申请人 HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP 发明人 GE, Ning;YANG, Jianhua;BARCELO, Steven;LI, Zhiyong;NG, Hou T.
分类号 H01L45/00;H01L27/24 主分类号 H01L45/00
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