| 摘要 |
PURPOSE:To contrive to improve the quality and yield of the titled device by facilitating the structure of multilayer wiring without the generation of passivation and wiring step cuts by smoothening the side wall surface of a first layer conductive thin film. CONSTITUTION:A conductive film 3 is formed on an Si substrate 1 through a diffusion process, etc. and an insulation film 2 formed thereon by means of vapor deposition, etc. Thereafter, the thin film 7 of a substance whose etching speed is higher than that of a conductive film 3 is formed when an etching process is performed. A resist film 4 is formed on the substance film 7 by a photolithography technique so as to obtain a fixed circuit wiring pattern after getting through the later etching process. The conductive film 3 is etched in tapered form, since the thin film 7 advances in etching faster than the conductive film 3 by performing etching with the resist mask 4 as the mask. Next, a pattern in a form of smooth curved surface on the side surface of the conductive film 3 can be formed by removing the thin film 7. Thereafter, a second insulation film 5 is formed by a normal method, and a second conductive film 6 is formed. |
