| 摘要 |
PURPOSE:To enable to obstruct the penetration of implanting ions to the under parts of an electrode and a wiring, and to facilitate a fine process by a method wherein a process to cover the oxide film of a high melting point metal on the surface of a metal thin film according to the anodic oxidation method is provided between a process to form the high melting point metal thin film and a process to perform ion implantation. CONSTITUTION:A silicon oxide film 2 for isolation between elemntsis formed, a tungsten film 4 is formed to 350nm thickness according to the sputtering method in succession, and moreover anodic oxidation is performed to oxidize tungsten of 7nm thickness. The oxide film thereof is removed using 1% aqueous ammonia to expose the fresh tungsten face, then anodic oxidation is performed applying the voltge of 15V to form the tungsten oxide film 5 of 35nm thickness. After then, a heat treatment is performed at 300 deg.C for 20min in a nitrogen atomsphere. The oxide film 5 and the film 4 are processed to the desired shape in succession, and after then, ion implantation 7 is performed. The advancing direction of implanted ions 7 to the film 5 varies large, and moreover large loss of kinetic energy is generated, and no channeling is generated. |
