| 摘要 |
PURPOSE:To obtain uniform thin film by controlling distribution of plasma as an AC field including a DC component in the glow discharge decomposition method, reducing damage due to radical in the plasma to the amorphous semiconductor thin film being formed on the substrate and also controlling film forming speed. CONSTITUTION:A substrate 2 is heated by a heater 13, after heated up to 200- 400 deg.C with a preheater the gas obtained by mixing SiH4 and Ar with 10:100 is supplied as the uniform flow by means of the gas flow control plate 14. Thereafter, the glow discharge plasma 3 is generated by applying a high frequency voltage from the 13.5MHz high frequency power supply 21 to the upper electrode so that high frequency power density of 0.01-0.1w/cm<2> and field intensity of 80-150V/cm<2> can be obtained. Moreover, the substrate electrode 11 is negatively biased and a DC component of -15V/cm is given, the plasma 3 is placed far from the substrate electrode 11 and thereby a-Si thin film can be deposited in the thickness of 10,000Angstrom on the substrate 2. |
