| 摘要 |
PURPOSE:To enable high speed switching action at a low temperature of approx. 77K by a method wherein the amount of flow of carriers distributed in a quasi one-dimensinal state having high mobility is controlled by an electric field. CONSTITUTION:An N<+>-GaAlAs layer 22, GaAs layer 23, an N<+>-Ga0.7Al0.3As layer 22, and a GaAs layer 24 are successively laminated and formed on an impurity non-doped GaAs layer 21 epitaxially grown on a semi-insulation GaAs substrate, and accordingly an ultra lattice structural part is formed by means of them. The layer 22 is formed to a thickness of approx. 200Angstrom having the electron density of approx. 5X10<17>cm<-3> doped with Si, and the layer 23 is not doped with impurity and has a thickness of 100Angstrom approx. The layer 24 is not doped with impurity and has a thickness of 1,000Angstrom . Pt gate electrodes 25 has Schottky junctions. The expansion in the depth direction formed in the GaAs layers 21, 23, and 24 in a plateau 26 is an electron channel in the quasi onedimensional state. Then, the flow of current is controlled by controlling the bias voltage of the electrodes 25. |
