SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE:To reduce the phenomenon of cross talk between light emitting regions in case of being formed into monolithic by a method wherein the first semiconductor layer is made P type, the second one N type, and the third one P or N type, while VIb group atoms such as Se, Te, and S are diffused in each window hole, and thus the parts of the first semiconductor layer divided by the corresponding window hole are reversed to N type. CONSTITUTION:An N type gallium arsenide GaAs semiconductor substrate 21 is prepared, and the P type first semiconductor layer 22 is epitaxially grown on one surface thereof. The second semiconductor layer 23 and the P type third semiconductor layer 24 are successively formed respectively by epitaxial growth of Ga1-xAlxAs and Ga1- yAlyAs. The inversion regions 34 and 35 are those of the inversed formation of the first semiconductor layers 22 divided by the window holes 26 and 27 selectively to N type by means of the impurity atom which is diffused from the bottoms of the window holes 26 and 27 to the second semiconductor layer 23. Although a forward directional bias is impressed by the impressed voltage between electrode layers 28, 29 and an electrode layer 31, the first semiconductor layer 22 remains between the P-N junction surface except the light emitting region, therefore the junction surface between the second semiconductor layer 23 turns to that of a reverse directional bias, and then is electrically insulated.