| 摘要 |
PURPOSE:To obtain the same characteristics and reliability as those of a transistor, which is attached to an outer protecting diode, without increasing a chip area, by providing the protecting diode corresponding to a transistor part at the part directly below the bonding pad of an emitter electrode, with an interval being provided from a base region. CONSTITUTION:A P<+> type FWD part 11 is formed so that it pierces through the part directly below the bonding pad for a base region 2 and reaches an emitter electrode 6, and an interval is provided between the part 11 and the base region 2. The FWD is formed together with the part corresponding to an N<-> type silicon substrate 1. In this way, the base region 2 and an emitter region 3 are formed except the part directly below the bonding pad, which is not well functioned as a transistor. In this part, the P<+> type FWD part 11 is formed in such a way that the interval is provided from the base region 2 and the part 11 is contacted with the emitter electrode 6. Thus the FWD can be formed together with the part of the N<-> type silicon substrate 1, to which the FWD part 11 corresponds. |
