发明名称 MANUFACURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enhance the reliability of an upper wiring layer by removing the overhanging insulating film at the periphery of upper opening of the wire connecting window. CONSTITUTION:After forming a lower wiring layer 12 on a semiconductor substrate 11, an insulating film 13 is deposited and a wiring connecting window 14 is formed using a photo resist. Then, after forming a resist film 16 on the entire surface of substrate 11, an insulating film 13 is exposed by etching said resist film and the surface layer is etching under the control up to the line X-X'. A substrate 11 in such a constitution that the overhanging insulating film 15 is removed can be obtained by removing the resist film 16. The insulating layer 13 can be perfectly covered by forming the specified upper wiring layer on such substrate 11 and therefore cracks are not generated and reliability can be improved.
申请公布号 JPS5944845(A) 申请公布日期 1984.03.13
申请号 JP19820156296 申请日期 1982.09.07
申请人 FUJITSU KK 发明人 TOKUNAGA HIROSHI;ABE RIYOUJI
分类号 H01L21/3213;H01L21/306 主分类号 H01L21/3213
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