| 摘要 |
PURPOSE:To enhance uniformity of processing and improve processing rate by releasing reaction gas to the entire area of discharge space between table and electrode and uniformly exhausting reaction gas, thereby controlling generation of eddy in the discharge space. CONSTITUTION:An exhausting hole 32 is bored at the center of table 30 connecting the discharge space 40 and an exhausting apparatus, while releasing holes 21 for releasing reaction gas to the entire part of discharge space 40 are bored with equal interval. After wafers 60 are placed on the table 30 and the inside of reaction chamber 11 is reduced in pressure and gas is exhausted, the reaction gas is uniformly released to the entire part of discharge space 40 from the releasing hole 21. Meanwhile, a mixed gas flows to the center of table 30 and to the circumference of table 30 within the discharge space 40 and the mixed gas flowing to the center of table 30 is exhausted through the exhausting hole 32. The mixed gas flowing to the circumference of table 30 passes a gap 41 and is exhausted through an exhaustion nozzle 10. Thereby, eddy in the discharge space 40 disappears. |
