| 摘要 |
PURPOSE:To improve sensitivity for detecting end point of the etching by comparatively detecting intensities of two kinds of plasma beams which increase or decrease at the time of ending the etching reaction. CONSTITUTION:For example, in case of plasma etching for silicon (Si) using the carbon tetrachloride (CCl4) gas, an intensity of light with wavelength of 510nm increases and an intensity of light with wavelength of 400nm decreases, upon completion of etching. However, the light emitting wavelength of chlorine is 510nm, while that of silicon chloride is 400nm. A sensitivity for detecting the end point of etching can be improved by comparing intensity of plasma of gas of which plasma intensity increases with the end of etching with an intensity of plasma of gas of which intensity decreases with the end of etching. |
