| 摘要 |
PURPOSE:To obtain a device of a high photoelectric conversion efficiency by a method wherein the following semiconductor layer is formed by plasma vapor reaction method or pressure reduction vapor growing method wherein growing temperature is regulated, when a non-single crystal semiconductor layer for generating photovoltage which is sandwiched between the first electrode composed of a photo transmitting conductive film and a metallic film is provided on a photo transmitting substrate. CONSTITUTION:The photo transmitting electrode 2 whose main constituent is Sn oxide is adhered on the photo transmitting substrate 1 composed of a glass, etc., and the non- single crystal semiconductor layer 3 for generating photovoltage having a P-I-N junction is grown thereon. Thereat, an N type layer of the layer 3 is decided as the outside, and then the non-single crystal semiconductor layer 3 is formed by the plasma vapor reaction method at a temperature of 350 deg.C or less or the pressure reduction vapor growing method at 300-500 deg.C. Next, the photo transmitting conductive film 5 composed of In oxide containing Sn oxide at 10wt% or less is adhered thereon, and a back electrode 6 composed of Al is formed thereon. Thus, an incident light 10 is made to come to the side of the substrate 1, and a reflected light 10' is made to radiate. |
