发明名称 SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device with excellent electric characteristics, or a semiconductor device with stable electric characteristics.SOLUTION: A semiconductor device includes a first transistor, a second transistor, a first insulator, a second insulator, a first wire, and a first plug. The first transistor includes silicon, and the second transistor includes an oxide semiconductor. The first insulator is positioned on the first transistor, and the second insulator is positioned on the first insulator. The second transistor is positioned on the second insulator. The first wire is positioned on the second insulator and on the first plug. The first transistor and the second transistor are electrically connected to each other through the first wire and the first plug. The first wire has low hydrogen transmissivity. The second insulator has lower hydrogen transmissivity than the first insulator.SELECTED DRAWING: Figure 1
申请公布号 JP2016187032(A) 申请公布日期 2016.10.27
申请号 JP20160051876 申请日期 2016.03.16
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 MIYAIRI HIDEKAZU;SATO YUICHI;ASANO YUJI;MARUYAMA YOSHIKI;ONUKI TATSUYA;NAGATSUKA SHUHEI
分类号 H01L29/786;G09F9/30;H01L21/8234;H01L21/8242;H01L21/8244;H01L27/06;H01L27/08;H01L27/088;H01L27/105;H01L27/108;H01L27/11 主分类号 H01L29/786
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