发明名称 PHOTOMASK
摘要 PURPOSE:To prevent damage of a light shading pattern without impairing any function of a photomask and to extend its life by forming a protective film of SiO2 on the whole surface of a quartz glass substrate on which the light shading pattern is formed. CONSTITUTION:A Cr pattern 2 having a 2-layer structure of Cr and Cr oxide is formed on a quartz glass substrate 1. On the whole surface of the substrate 1 a polysilicone film 3 is formed by the chemical gas phase growth method to 200-1,000nm thickness, then, placed in a furnace at about 1,100 deg.C, and heat oxidized to convert the polysilicone film 3 into an SiO2 film 4, thus obtaining a protective film.
申请公布号 JPS59113443(A) 申请公布日期 1984.06.30
申请号 JP19820223183 申请日期 1982.12.20
申请人 FUJITSU KK 发明人 SHIGEMATSU KAZUMASA
分类号 G03F1/00;G03F1/48;H01L21/027 主分类号 G03F1/00
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