| 摘要 |
PURPOSE:To prevent the crystallization of Si on each epitaxial layer by vertically piling many wafers contained in jigs, carrying out epitaxial growth while keeping a temp. gradient for making the temp. of the upper part higher and the temp. of the lower part lower, reversing the temp. gradient, and cooling the wafers. CONSTITUTION:Many wafers 1 contained in jigs are vertically piled in a quartz crucible 4 filled with a soln. 3 contg. a solute for forming each epitaxial layer of a compound semiconductor and Si as a dopant, and the crucible 4 is placed at a position A in a quartz tube. The tube is heated with an external heater 5 to provide a doglegged temp. distribution shown by the diagram (where T is the temp., and X is the height of the tube) to the inside of the tube, and epitaxial growth is carried out while keeping a temp. gradient for making the upper part higher and the lower part lower. After finishing the growth, the crucible 4 is moved to a position B, and the wafers 1 are cooled while keeping a temp. gradient for making the temp. of the upper part lower and the temp. of the lower part higher. |
