| 摘要 |
A heat conductive ceramic substrate for semiconductor circuits, comprising polycrystalline aluminum nitride of high density containing as an additive boron nitride or oxides of calcium, magnesium, aluminum, titanium, zirconium, chrome, silicon, and/or rare earth metals. The boron nitride additive concentration ranges between 0.1 and 3% by weight, preferably between 0.5 and 2% by weight. The oxide additive concentration ranges between 0.1 and 5% by weight. The substrate has a significantly higher thermal conductivity than aluminum oxide substrates and is more economincal to manufacture than beryllium oxide substrates. |
